| 摘要: |
| 对拟南芥种子进行能量为30 keV的不同剂量N+离子束诱变，以当代拟南芥幼苗叶片为材料建立基因池，并进行随机引物扩增多态性DNA(RAPD)技术分析。结果表明，每个基因池可扩增出约200条有效条带，不同剂量组变异率随剂量的增加而增大。对经离子注入后的拟南芥发芽率统计显示，发芽率并不随剂量的增加而单调下降。最后初步探讨了不同剂量条件下发芽率和变异率变化趋势不一致的机制。 |
| 关键词: 离子注入 拟南芥 离子束诱变 RAPD 变异率 |
| DOI： |
| 分类号: |
| 基金项目:国家“十五”科技攻关项目（2001BA302B-03） |
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| The variations of M1 to the seeds of Arabidopsis thaliana implanted by keV N+ ion beam |
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| Abstract: |
| After the Arabidopsis thaliana seeds were implanted by the different doses of the N+ ion beams with the energy of 30 keV,DNA pools were set up and their changes of the M1 DNA were investigated using the method of RAPD.The results indicated that there are about 200 bands of RAPD generated.With the intensification of the implantation dose,compared with the control genomic DNA,the rates of the frequencies of RAPD variation increased.Moreover,the germination percentages of the implantation seeds were counted.It suggested that the germination percentages were not always decreased with the dose increase.And at last,the reason that the trends of the germination percentage and the mutation percentage with the different dose were not consistent was discussed. |
| Key words: ion implantation Arabidopsis thaliana ion beam mutation RAPD variation rate |
